logo

QPD0050 Datasheet, TriQuint Semiconductor

QPD0050 transistor equivalent, rf power transistor.

QPD0050 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 720.78KB)

QPD0050 Datasheet
QPD0050
Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 720.78KB)

QPD0050 Datasheet

Features and benefits


* Operating Frequency Range: DC to 3.6 GHz
* Operating Drain Voltage: 48 V
* Maximum Output Power (PSAT): 82.8 W at 2.6 GHz
* Maximum Drain Efficiency: 78.

Application


* W-CDMA / LTE
* Macrocell Base Station Driver
* Microcell Base Station
* Small Cell Final Stage
* A.

Description

The QPD0050 is a wide band over-molded QFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor. The QPD0050 can be used in Doherty architecture for the final stage of a base station power amplifier for small ce.

Image gallery

QPD0050 Page 1 QPD0050 Page 2 QPD0050 Page 3

TAGS

QPD0050
Power
Transistor
TriQuint Semiconductor

Manufacturer


TriQuint Semiconductor

Related datasheet

QPD0030

QPD1003

QPD1006

QPD1011

QPD1013

QPD1018

QPD1026L

QP-5515

QP12W08S-37

QP25

QP26LS31

QP26LS32

QP26LS33

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts